b-20 01/99 2n5397, 2n5398 n-channel silicon junction field-effect transistor low-noise high power gain high transconductance mixers oscillators vhf amplifiers absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 25 v drain source voltage 25 v continuous forward gate current 10 ma continuous device power dissipation 300 mw power derating 1.7 mw/c toe72 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate, 4 case surface mount smp5397, SMP5398 at 25c free air temperature: 2n5397 2n5398 process nj26l static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss C 25 C 25 v i g = C 1 a, v ds = ?v gate source forward voltage v gs(f) 11vi g = 1 ma, v ds = ?v gate reverse current i gss C 0.1 C 0.1 na v gs = C 15 v, v ds = ?v C 0.1 C 0.1 a v gs = C 15 v, v ds = ?v t a = 150c gate source cutoff voltage v gs(off) C 1C 6C 1C 6 v v ds = 10 v, i d = 1 na drain saturation current (pulsed) i dss 10 30 5 40 ma v ds = 10 v, v gs = ? v dynamic electrical characteristics common source g fs 5.5 9 5 10 ms v dg = 10 v, i d = 10 ma f = 450 mhz forward transconductance common source | y fs | 6 10 5.5 10 ms v ds = 10 v, i d = 10 ma f = 1 khz forward transfer admittance common source output conductance | g os | 0.4 0.5 ms v dg = 10 v, i d = 10 ma f = 450 mhz common source input admittance | y os | 0.2 0.4 ms v ds = 10 v, i d = 10 ma f = 1 khz common source input conductance g is 23msv dg = 10 v, i d = 10 ma f = 450 mhz common source input capacitance c iss 5 5.5 pf v dg = 15 v, v gs = ?v f = 1 khz common source c rss 1.2 1.3 pf v dg = 15 v, v gs = ?v f = 1 khz reverse transfer capacitance 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-20
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